1 金陵科技学院 材料工程学院,南京 211169
2 南京理工大学 理学院,南京 210094
为了定量研究红外激光辐照下砷化镓的损伤过程,采用波长1080 nm的光纤激光作为光源,接收砷化镓前后表面经激光照射产生的散射光,依据接收到的散射光强度对损伤过程进行实时监测,并建立有限元模型研究了砷化镓温度场和散射信号的演变规律。结果表明,散射曲线的3个阶段分别代表了砷化镓处于非本征吸收阶段、本征吸收阶段和表面损伤阶段; 当激光功率密度为1.8 kW/cm2、辐照时间为193 ms时,表面开始损伤,可以观察到滑移线; 对损伤中心的元素含量进行分析,氧元素含量大大增加,说明热应力和氧化反应是激光致砷化镓表面产生损伤的主要机制。此研究可为激光辐照过程中砷化镓的温升、热应力和烧蚀等深入研究提供理论和实验依据。
激光技术 损伤 散射信号 砷化镓 laser technique damage scattering signal GaAs
Author Affiliations
Abstract
1 School of Science, Nanjing University of Science & Technology, Nanjing 210094, China
2 Institute of Mechanical and Electrical Engineering, Zhoukou Normal University, Zhoukou 466000, China
The stress damage process of a single crystal silicon wafer under millisecond laser irradiation is studied by experiments and numerical simulations. The formation process of low-quality surface is monitored in real-time. Stress damage can be observed both in laser-on and -off periods. Plastic deformation is responsible for the first stress damage in the laser-on period. The second stress damage in the laser-off period is a combination of plastic deformation and fracture, where the fundamental cause lies in the residual molten silicon in the ablation hole.
140.3330 Laser damage 140.3390 Laser materials processing Chinese Optics Letters
2018, 16(1): 011404
